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  4. 以表面活化接合技術開發矽晶片與基板之室溫覆晶接合製程與其接合機理之研究
 
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以表面活化接合技術開發矽晶片與基板之室溫覆晶接合製程與其接合機理之研究

  • Details
Project title
100學年度國家科學及技術委員會補助研究計畫
Acronym
專題研究計畫
Principal Investigator
Chuang, Cheng-Li  
Start Date
August 1, 2011
End Date
September 15, 2012
Organizations
School of Occupational Safety and Health  
Partner Organizations
National Science and Technology Council  
Keywords
電漿活化接合
熱壓覆晶接合
金凸塊
銅電極
Description
本研究以表面電漿活化接合(surface activated bonding, SAB)技術運用於金凸塊與銅電極之覆晶接合製程,此活化技術選用物理性氬氣電漿對接合材料表面進行活化處理,期以電漿...(詳)
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