The effect of deposition temperature and chamber pressure on the electrical and physical properties of the MgTiO3 thin films

The effects of deposition temperature and pressure on the properties of MgTiO3 the films were investigated. MgTiO3 thin films were grown on Si(1 0 0) substrate by radio frequency (RF) magnetron sputtering. The microstructure and the surface morphology of MgTiO3 thin film have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with an increase in the substrate temperature. The electrical properties were measured using C-V and current-voltage (I-V) measurements on metal-insulator-semiconductor (MIS) capacitor structures. At a Ar/O2 ratio of 100/0, RF power of 400 W and substrate temperature of 350 °C, the MgTiO3 films with 5.62 μm thickness possess a dielectric constant of 15.91 (f = 10 MHz), a leakage current density of 9.1 × 10-10 A/mm2 was obtained at 500 kV/cm. The leakage current decreased with decrease chamber pressure and substrate temperature.