Exploring the Influence of Copper Chemical Displacement Duration on Nonvolatile Oxide-based Resistive Memory Device Characteristics

Journal
Sensors and Materials
Journal Volume
36
Journal Issue
3
Start Page
1093
ISSN
0914-4935
2435-0869
Date Issued
2024-03-25
Author(s)
Chu-En Lin
Bo-Qin Yu
Yi-Ching Cheng
Hsin-Chiang You
I-Nan Chang
Chi-Chang Wu
DOI
URI
Publisher
MYU K.K.
Type
journal-article