SHIH-HUNG LIN2026-10-162026-10-162009-07-08Pure ID: 15369535Pure UUID: 03278d3a-15cf-445f-bdab-ea41f5a8953110.1016/j.jallcom.2009.02.065https://www.scopus.com/pages/publications/67349132374https://scholars.csmu.edu.tw/handle/123456789/26324The effects of deposition temperature and pressure on the properties of MgTiO3 the films were investigated. MgTiO3 thin films were grown on Si(1 0 0) substrate by radio frequency (RF) magnetron sputtering. The microstructure and the surface morphology of MgTiO3 thin film have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with an increase in the substrate temperature. The electrical properties were measured using C-V and current-voltage (I-V) measurements on metal-insulator-semiconductor (MIS) capacitor structures. At a Ar/O2 ratio of 100/0, RF power of 400 W and substrate temperature of 350 °C, the MgTiO3 films with 5.62 μm thickness possess a dielectric constant of 15.91 (f = 10 MHz), a leakage current density of 9.1 × 10-10 A/mm2 was obtained at 500 kV/cm. The leakage current decreased with decrease chamber pressure and substrate temperature.6enjournal article