Chu-En LinBo-Qin YuYi-Ching ChengHsin-Chiang YouI-Nan ChangJung-Chih LinChi-Chang Wu2026-02-042026-02-042024-03-2510.18494/SAM4740https://scholars.csmu.edu.tw/handle/123456789/4951Exploring the Influence of Copper Chemical Displacement Duration on Nonvolatile Oxide-based Resistive Memory Device Characteristicsjournal-article